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ISCNH346F Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCNH346F
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH346F Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNH346F
FEATURES
·
Drain Current –ID= 10A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 600V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRITION
·
Designed for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
10
A
IDM
Drain Current-Single Plused
38
A
PD
Total Dissipation @TC=25℃
30
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
4.17
℃
/W


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