ISCNH348P datasheet(2/3 Pages) ISC

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ISCNH348P

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

600

VGS(th)

Gate Threshold Voltage

VDS= 10V; ID= 1mA

3.0

4.0

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 4A

1.0

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0

0.1

IDSS

Zero Gate Voltage Drain Current

VDS= 600V; VGS= 0

1.0

Ciss

Input Capacitance

VGS = 0V,

VDS = 25V,

f = 1.0MHz

966

Coss

Output Capacitance

115.5

Crss

Reverse Transfer Capacitance

19.5

Total Gate Charge

VDD = 480V,

ID = 8A,

VGS = 10V

Qgs

Gate-Source Charge

4.5

Qgd

Gate-Drain Charge

18.5

td(on)

Turn-on Delay Time

VDD = 300V,

ID =8A,

RG = 25 Ω

38.5

Turn-on Rise Time

28.5

td(off)

Turn-off Delay Time

153

Turn-off Fall Time

43.6

Continuous Source Current

TC = 25 ºC

ISM

Pulsed Source Current

VSD

Diode Forward Voltage

TJ = 25ºC,ISD = 4A,VGS = 0V

1.4

trr

Reverse Recovery Time

VGS = 0V,

IS = 8A,

diF /dt =100A /μs

575.6

Qrr

Reverse Recovery Charge

1.96

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