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STTH3002G Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STTH3002G Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Ultrafast Rectifier STTH3002G FEATURES · Guarding for over voltage protection · Dual rectifier construction,positive center tap · Metal of silicon rectifier,majority carrier conduction · Low forward voltage,high efficiency · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Rectifier in switch mode supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 30 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60Hz) 300 A PD Maximum power dissipation 100 W TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ |
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Ähnliche Beschreibung - STTH3002G |
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