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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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TN2106 Datenblatt(PDF) 1 Page - Microchip Technology |
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TN2106 Datenblatt(HTML) 1 Page - Microchip Technology |
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1 / 14 page  2020 Microchip Technology Inc. DS20005942A-page 1 TN2106 Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Types See Table 3-1 and Table 3-2 for pin information. 3-lead TO-92 (Top view) GATE SOURCE DRAIN 3-lead SOT-23 (Top view) DRAIN SOURCE GATE N-Channel Enhancement-Mode Vertical DMOS FET |
Ähnliche Teilenummer - TN2106 |
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Ähnliche Beschreibung - TN2106 |
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