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WCMS0808U1X Datenblatt(PDF) 2 Page - Weida Semiconductor, Inc.

Teilenummer WCMS0808U1X
Bauteilbeschribung  32K x 8 Static RAM
PDF  10 Pages
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Hersteller  WEIDA [Weida Semiconductor, Inc.]
Direct Link  http://www.weida.com.my/website/
Logo WEIDA - Weida Semiconductor, Inc.

WCMS0808U1X Datenblatt(HTML) 2 Page - Weida Semiconductor, Inc.

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WCMS0808U1X
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Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
..................................... −65°C to +150°C
Ambient Temperature with
Power Applied................................................... 0°C to +70°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14)
.................................................−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[1]
........................................ −0.5V to V
CC + 0.5V
DC Input Voltage[1]
.................................... −0.5V to V
CC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Range
Ambient Temperature
VCC
Industrial
−40°C to +85°C
2.7V to 3.6V
Product Portfolio
Product
VCC Range
Speed
Power Dissipation (LL Devices)
Operating (ICC)
Standby (ISB2)
Min.
Typ.
Max.
Typ.
Max.
Typ.
Max.
WCMS0808U1X
2.7V
3.0
3.6V
70 ns
11 mA
30 mA
0.1
µA
40
µA
Electrical Characteristics Over the Operating Range
Test Conditions
WCMS0808U1X
Parameter
Description
Min.
Typ.[1]
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = −1.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC
+0.3V
V
VIL
Input LOW Voltage
−0.5
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
−1
+1
µA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
−1
+1
µA
ICC
VCC Operating Supply
Current
VCC = 3.6V,
IOUT = 0 mA,
f = fMAX = 1/tRC
Ind’l
11
30
mA
ISB1
Automatic CE Power-Down
Current— TTL Inputs
Max. VCC, CE > VIH,
VIN > VIH or VIN < VIL, f = fMAX
Ind’l
100
300
µA
ISB2
Automatic CE
Power-Down Current—
CMOS Inputs
Max. VCC, CE > VCC – 0.3V
VIN > VCC – 0.3V or VIN < 0.3V, f = 0
Ind’l
0.1
40
µA
Capacitance[3]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 3.0V
6
pF
COUT
Output Capacitance
8
pF
Notes:
1.
VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2.
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = Vcc Typ., TA = 25°C, and tAA=70ns.
3.
Tested initially and after any design or process changes that may affect these parameters.



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