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WCMS0808U1X Datenblatt(PDF) 2 Page - Weida Semiconductor, Inc. |
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WCMS0808U1X Datenblatt(HTML) 2 Page - Weida Semiconductor, Inc. |
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2 / 10 page ![]() WCMS0808U1X Page 2 of 10 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ..................................... −65°C to +150°C Ambient Temperature with Power Applied................................................... 0°C to +70°C Supply Voltage to Ground Potential (Pin 28 to Pin 14) .................................................−0.5V to +4.6V DC Voltage Applied to Outputs in High Z State[1] ........................................ −0.5V to V CC + 0.5V DC Input Voltage[1] .................................... −0.5V to V CC + 0.5V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... >200 mA Operating Range Range Ambient Temperature VCC Industrial −40°C to +85°C 2.7V to 3.6V Product Portfolio Product VCC Range Speed Power Dissipation (LL Devices) Operating (ICC) Standby (ISB2) Min. Typ. Max. Typ. Max. Typ. Max. WCMS0808U1X 2.7V 3.0 3.6V 70 ns 11 mA 30 mA 0.1 µA 40 µA Electrical Characteristics Over the Operating Range Test Conditions WCMS0808U1X Parameter Description Min. Typ.[1] Max. Unit VOH Output HIGH Voltage VCC = Min., IOH = −1.0 mA 2.4 V VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA 0.4 V VIH Input HIGH Voltage 2.2 VCC +0.3V V VIL Input LOW Voltage −0.5 0.8 V IIX Input Leakage Current GND < VI < VCC −1 +1 µA IOZ Output Leakage Current GND < VO < VCC, Output Disabled −1 +1 µA ICC VCC Operating Supply Current VCC = 3.6V, IOUT = 0 mA, f = fMAX = 1/tRC Ind’l 11 30 mA ISB1 Automatic CE Power-Down Current— TTL Inputs Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX Ind’l 100 300 µA ISB2 Automatic CE Power-Down Current— CMOS Inputs Max. VCC, CE > VCC – 0.3V VIN > VCC – 0.3V or VIN < 0.3V, f = 0 Ind’l 0.1 40 µA Capacitance[3] Parameter Description Test Conditions Max. Unit CIN Input Capacitance TA = 25°C, f = 1 MHz, VCC = 3.0V 6 pF COUT Output Capacitance 8 pF Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = Vcc Typ., TA = 25°C, and tAA=70ns. 3. Tested initially and after any design or process changes that may affect these parameters. |
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