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QPD1009 Datenblatt(PDF) 7 Page - Qorvo, Inc |
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QPD1009 Datenblatt(HTML) 7 Page - Qorvo, Inc |
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7 / 28 page ![]() QPD1009 15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 7 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Load Pull Smith Charts1, 2, 3 Notes: 1. Vd = 50 V, IDQ = 26 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 18 for load pull and source pull reference planes. 20-Ω load pull TRL fixtures are built with 20-mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1GHz, Load-pull 41.8 41.6 41.4 26.9 26.4 25.9 75.3 73.3 71.3 • Max Power is 41.9dBm at Z = 43.291+21.601i = 0.4339+0.1932i • Max Gain is 27.3dB at Z = 17.436+42.271i = 0.5303+0.5303i • Max PAE is 77.8% at Z = 49.596+64.764i = 0.692+0.2866i Zo = 20 3dB Compression Referenced to Peak Gain Zs(fo) = 7.8+20.21i Zs(2fo) = 3.78-5.19i Zs(3fo) = 5.19+13.37i Zl(2fo) = NaN Zl(3fo) = NaN Power Gain PAE |
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