Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

STM32L15XCC Datenblatt(PDF) 81 Page - STMicroelectronics

Teilenummer STM32L15XCC
Bauteilbeschribung  Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC
PDF  136 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L15XCC Datenblatt(HTML) 81 Page - STMicroelectronics

Back Button STM32L15XCC Datasheet HTML 77Page - STMicroelectronics STM32L15XCC Datasheet HTML 78Page - STMicroelectronics STM32L15XCC Datasheet HTML 79Page - STMicroelectronics STM32L15XCC Datasheet HTML 80Page - STMicroelectronics STM32L15XCC Datasheet HTML 81Page - STMicroelectronics STM32L15XCC Datasheet HTML 82Page - STMicroelectronics STM32L15XCC Datasheet HTML 83Page - STMicroelectronics STM32L15XCC Datasheet HTML 84Page - STMicroelectronics STM32L15XCC Datasheet HTML 85Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 81 / 136 page
background image
DocID022799 Rev 13
81/136
STM32L151xC STM32L152xC
Electrical characteristics
109
Flash memory and data EEPROM
Table 36. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
VDD
Operating voltage
Read / Write / Erase
-1.65
-
3.6
V
tprog
Programming/ erasing
time for byte / word /
double word / half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
600
900
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA
Table 37. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization results.
Typ Max
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to
105 °C
10
--
kcycles
Cycling (erase / write)
EEPROM data memory
300
--
tRET(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at TA = 85 °C
TRET = +85 °C
30
-
-
years
Data retention (EEPROM data memory)
after 300 kcycles at TA = 85 °C
30
-
-
Data retention (program memory) after
10 kcycles at TA = 105 °C
TRET = +105 °C
10
-
-
Data retention (EEPROM data memory)
after 300 kcycles at TA = 105 °C
10
-
-



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com