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STGF30M65DF2 Datenblatt(PDF) 1 Page - STMicroelectronics |
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STGF30M65DF2 Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() April 2017 DocID027430 Rev 5 1/16 This is information on a product in full production. www.st.com STGF30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGF30M65DF2 G30M65DF2 TO-220FP Tube TO-220FP C (2) G (1) E (3) Sc12850_no_tab |
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