LLDB4 datasheet(1/1 Pages) EIC

Teilenummer	LLDB4

Bauteilbeschribung	SILICON BI-DIRECTIONAL DIACS

PDF	1 Pages

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Hersteller	EIC [EIC discrete Semiconductors]

Direct Link	http://www.eicsemi.com

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LLDB3, LLDB4

SILICON BI-DIRECTIONAL DIACS

The glass passivated, three-layer,two terminal,axial lead,

hermetically sealed diacs are designed specifically for

triggering thyristors.They demonstrate low breakover

current at breakover voltage as they withstand peak

pulse current. The breakover symmeter is within four

volts with a typical breakover voltage of LLDB3 32 V,

LLDB 40 V.These diacs are intended for use in thyrister

phase control,circuits for lamp-dimming,universal-motor

speed controls,and heat controls.

FEATURES :

* VBR : 32 V and 40 V

* Low breakover current

* Pb / RoHS Free

MECHANICAL DATA :

Case:

MiniMELF Glass Case (SOD-80)

Weight:

approx. 0.05g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 °C)

SYMBOL

UNIT

Minimum Breakover Voltage

VBR1 and VBR2 (Min.)

V

Typical Breakover Voltage

VBR1 and VBR2 (Typ.)

V

Maximum Breakover Voltage

VBR1 and VBR2 (Max.)

V

Maximum Breakover Current

I(BR)1 and I(BR)2

200

μA

Maximum Breakover Voltage Symmetry

[V(BR)1] - [V(BR)2]

3.8

V

Minimum Dynamic Breakback Voltage

∆I = [IBR to IF = 10 mA]

Maximum Peak Current at Ta = 50 °C

(10 μs duration, 120 cycle repetition rate)

Maximum Peak output Voltage at Ta = 50 °C **

eP

±3

V

Thermal Impedance Junction to Ambient

RӨJA

60

°C/W

Operating Junction Temperature Range

TJ

- 40 to + 100

°C

Storage Temperature Range

TSTG

- 40 to + 150

°C

Page 1 of 1

Rev. 00: November 12, 2009

RATING

LLDB3

LLDB4

28

35

32

40

36

45

|

ΔV ± |

5.0

V

IP

±2

A

**CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST

0.142(3.6)

0.134(3.4)

φ 0.063 (1.64)

0.055 (1.40)

0.019(0.48)

0.011(0.28)

Cathode Mark

MiniMELF (SOD-80C)

Dimensions in inches and ( millimeters )

Mounting Pad Layout

0.049 (1.25)Min.

0.197 (5.00)

REF

0.079 (2.00)Min.

www.eicsemi.com

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