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SAMWIN
SW740
REV0.2
04.11.1
Fig 1. On-State Characteristics
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 2. Transfer Characteristics
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
(Non-Repetitve)
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
top: 15V
10V
9V
8V
7V
6V
5.5V
bottom:5V
V
DS,Drain-to-Source voltage [V]
24
68
10
0.1
1
10
25
oC
150
oC
Note:
1.V
DS
=50V
2.250us pulse test.
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
25
30
35
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
GS
=10V
V
GS
=20V
Note:T
J
=25
o
C
I
D
, Drain Current[A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
150
oC
25
oC
V
SD
,Source-Drain Voltage[V]
Note:
1.v
GS
=0v
2.250us test
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
Note:I
D
=10A
Q
G
,Total Gate Charge [nC]
V
DS
=320V
V
DS
=200V
V
DS
=80V
0.1
1
10
0
500
1000
1500
2000
2500
3000
V
DS
,Drain-Source Voltage [V]
C
rss
C
oss
C
iss
Note:
1.V
GS
=0V
2.f=1MHz.
Ciss = Cgs+Cgd(Cds=shorted)
Coss= Cds+Cgd
Crss = Cgd
3/6
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