SAMWIN
SW840
REV0.1
04.10.15
Features
N-Channel MOSFET
BV
DSS (Minimum)
R
DS(ON) (Maximum)
I
D
Qg (Typical)
P
D (@TC=25
)
General Description
This power MOSFET is produced with advanced
VDMOS process, planar stripe. This technology enable
power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge
and especially excellent avalanche characteristics. This
power MOSFET is usually used at high efficient DC to
DC converter block, high efficiency switch mode power
supplies, power factor correction, electronic lamp ballast
based on half bridge.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
500
V
Continuous Drain Current (@Tc=25
)
8.5
A
Continuous Drain Current (@Tc=100
)
6.2
A
I
DM
Drain Current Pulsed
(Note 1)
34
A
V
GS
Gate to Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
360
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
12.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
Total Power Dissipation (@Tc=25
)
125
W
Derating Factor above 25
1.18
W/
T
STG,TJ
Operating junction temperature &Storage temperature
-55~+150
T
L
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
300
P
D
I
D
Thermal Characteristics
/ W
62.5
-
-
Thermal Resistance, Junction-to-Ambient
R
JA
/ W
-
0.5
-
Thermal Resistance, Case-to-Sink
R
CS
/ W
1.0
-
-
Thermal Resistance, Junction-to-Case
R
JC
Max
Typ
Min
Units
Value
Parameter
Symbol
1/6
: 500V
: 0.85 ohm
: 8.5A
: 36 nc
: 125W
G
S
D
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
