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ADPA1106ACGZN-R7 Datenblatt(PDF) 17 Page - Analog Devices

Teilenummer ADPA1106ACGZN-R7
Bauteilbeschribung  46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier
PDF  19 Pages
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Hersteller  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADPA1106ACGZN-R7 Datenblatt(HTML) 17 Page - Analog Devices

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Data Sheet
ADPA1106
APPLICATIONS INFORMATION
analog.com
Rev. 0 | 17 of 19
Figure 53. Recommended Detector Subtraction Circuit
THERMAL MANAGEMENT
Proper thermal management is critical to achieve the specified
performance and rated operating life. Pulsed biasing is required
to limit the average power dissipated and maintain a safe channel
temperature. The channel (or die) temperature correlates closely
with the mean time to failure.
Consider a continuous bias case (see Figure 54). When bias is ap-
plied, the channel temperature (TCHAN) of the device rises through
a turn on transient interval and eventually settles to a steady state
value. Calculate the θJC thermal resistance of the device as the rise
in TCHAN above the starting TBASE divided by the total device PDISS
with the following equation:
θJC = tRISE/PDISS
where:
tRISE is the peak rise in the TCHAN of the device above the TBASE
(°C).
PDISS is the power dissipation (W) of the device.
Figure 54. Continuous Bias
Next, consider a pulsed bias case at a fixed pulse width and duty
cycle (see Figure 55). When bias is applied, the TCHAN of the
device can be described as a series of exponentially rising and
decaying pulses. The peak channel temperature reached during
consecutive pulses increases during the turn on transient interval,
and eventually settles to a steady state condition where peak
channel temperatures from pulse to pulse stabilize.



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