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TP5335 Datenblatt(PDF) 3 Page - Microchip Technology

Teilenummer TP5335
Bauteilbeschribung  P-Channel Enhancement-Mode Vertical DMOS FET
PDF  14 Pages
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Hersteller  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TP5335 Datenblatt(HTML) 3 Page - Microchip Technology

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 2018-2022 Microchip Technology Inc. and its subsidiaries
DS20005704D-page 3
TP5335
Zero-Gate Voltage Drain Current
IDSS
—
—
–10
µA
VDS = Maximum rating,
VGS = 0V
——
–1
mA
VDS = Maximum rating,
VGS = 0V
On-State Drain Current
ID(ON)
–200
——
mA
VGS = –4.5V, VDS = –25V
–400
—
—
mA
VGS = –10V, VDS = –25V
–375
——
mA
VGS = –10V, VDS = –25V
Static Drain-to-Source On-State
Resistance
RDS(ON)
——
75
Ω
VGS = –4.5V, ID = –150 mA
——
30
Ω
VGS = –10V, ID = –200 mA
——
70
Ω
VGS = –10V, ID = –200 mA
Change in RDS(ON) with
Temperature
ΔRDS(ON)
—1
—
%/°C
VGS = –10V, ID = –200 mA
(Note 1)
DC ELECTRICAL CHARACTERISTICS – AUTOMOTIVE (CONTINUED)
Electrical Specifications: Boldface specification limits apply over the full operating temperature range of
TA =TJ = –55°C, 25°C, and 150°C unless otherwise specified. Non-boldfaced specification limits apply only to
TA =TJ = 25°C unless otherwise specified. All DC parameters are 100% tested at all three temperatures unless
otherwise specified. (Pulse test: 300 µs pulse, 2% duty cycle.)
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Note 1: Specification is obtained by characterization and is not 100% tested.
AC ELECTRICAL CHARACTERISTICS – COMMERCIAL
Electrical Specifications: TA = TJ = 25°C unless otherwise specified. Specification is obtained by characterization
and is not 100% tested.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Forward Transconductance
GFS
125
—
—
mmho VDS = –25V, ID = –200 mA
Input Capacitance
CISS
——
110
pF
VGS = 0V, VDS = –25V,
f = 1 MHz
Common Source Output
Capacitance
COSS
——
60
pF
Reverse Transfer Capacitance
CRSS
——
22
pF
Turn-On Delay Time
td(ON)
—
—
20
ns
VDD = –25V, ID = –150 mA,
RGEN = 25Ω
Rise Time
tr
—
—
15
ns
Turn-Off Delay Time
td(OFF)
—
—
25
ns
Fall Time
tf
—
—
25
ns
DIODE PARAMETER
Diode Forward Voltage Drop
VSD
—
—
–1.8
V
VGS = 0V, ISD = –200 mA
(Note 1)
Reverse Recovery Time
trr
—800
—
ns
VGS = 0V, ISD = –200 mA
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.(Pulse test: 300 µs pulse, 2% duty
cycle.)



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