MMBD6050 datasheet(2/5 Pages) VISHAY

2 / 5 page

MMBD6050

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 13-Feb-18

Document Number: 85735

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Dynamic Forward Resistance vs. Forward Current

Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 3 - Dynamic Forward Resistance vs. Forward Current

Fig. 4 - Relative Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reverse breakdown voltage

IR = 100 μA

V(BR)

Forward voltage

IF = 1 mA

0.55

0.7

IF = 100 mA

0.85

1.1

Reverse leakage current

VR = 50 V

100

Reverse recovery time

IF = IR = 10 mA, iR = 1 mA

trr

4ns

Diode capacitance

VR = 0

2.5

100

18861

IF - Forward Current (mA)

200

18889

Tamb - Ambient Temperature ( °C)

500

400

300

200

100

20 40 60 80 100 120 140 160 180

18662

100

1000

10000

110

0.1

0.01

100

IF - Forward Current (mA)

=25

°C

f=1kHz

18664

2468

1.1

1.0

0.9

0.8

0.7

VR - Reverse Voltage (V)

=25

°C

f=1MHz

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