QPD1008LEVB2 datasheet(2/20 Pages) QORVO

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QPD1008L

125W, 50V, DC

– 3.2 GHz, GaN RF Transistor

Data Sheet Rev. I, October 2021 | Subject to change without notice

2 of 20

www.qorvo.com

Absolute Maximum Ratings

Parameter

Rating

Drain to Gate Voltage (VDG)

145 V

Gate Voltage Range (VG)

−7 to +2 V

RF Input Power, CW, 50 Ω, T = 25 °C

40 dB

Power Dissipation PDISS

See graph on page 5

Storage Temperature

−65 to 150°C

Exceeding any one or a combination of the Absolute Maximum Rating

conditions may cause permanent damage to the device. Extended

application of Absolute Maximum Rating conditions to the device may

reduce device reliability.

Recommended Operating Conditions

Parameter

Min Typ Max Unit

Drain Voltage (VD)

+12

+48

+55

Carrier Gate Voltage (VG)

−2.8

Carrier Quiescent Current (IDQ1)

260

Operating Temperature Range

−40

+25

+85

°C

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Note:

To be adjusted to desired IDQ

Electrical Characterization

Symbol

Parameter

Min

Typical

Max

Units

Gate

Leakage

VD = +10 V, VG

= −3.8 V

−23.1

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