ACE11545B datasheet(1/2 Pages) ACE

Teilenummer	ACE11545B

Bauteilbeschribung	P-Channel Enhancement Mode Field Effect Transistor

PDF	2 Pages

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Hersteller	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE11545B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.1

1

General Description

⚫

load switch

⚫

other general applications

Features

⚫

VDS= -20V, ID=-7A

⚫

RDS(ON)@ VGS = -4.5V, TYP= 29mΩ

⚫

RDS(ON)@ VGS = -2.5V, TYP= 34mΩ

Absolute Maximum Ratings@TA=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±10

V

Drain Current (Continuous)*AC

TA=25℃

ID

-7.0

A

TA=70℃

-5.8

Drain Current (Pulsed)*B

IDM

-30

A

Power Dissipation

TA=25℃

PD

1.25

W

Operating temperature / Storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Thermal Resistance Ratings

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient

t ≤ 10 s

RthJA

75

100

℃/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

43

52

Ordering information

ACE11545B XX + H

BM: SOT-23-3

Pb - free

Halogen - free

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