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ACE8204TL Datenblatt(PDF) 2 Page - ACE Technology Co., LTD.

Teilenummer ACE8204TL
Bauteilbeschribung  Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
PDF  7 Pages
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Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE8204TL Datenblatt(HTML) 2 Page - ACE Technology Co., LTD.

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ACE8204TL
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
VER 1.2
2
Ordering information
ACE8204TL XX + H
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250 uA
20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
0.3
0.7
1.1
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
10
uA
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
uA
Drain-Source On-state
Resistance
RDS(ON)
VGS=4.5V, ID=6A
12.5
17
m
Ω
VGS=2.5V, ID=5.5A
17.7
24
Forward Transconductance
g
FS
VDS=5V,ID=6A
33
S
Diode Forward Voltage
VSD
ISD=1A, VGS=0V
1
V
Maximum Body-Diode
Continuous Current
IS
3.5
A
Switching
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=6A
11
nC
Gate-Source Charge
Qgs
2
Gate-Drain Charge
Qgd
3.2
Turn-On Time
td(on)
VGS=5V, RL=1.7
Ω, V
DS=10V,
RGEN=3
Ω
0.3
us
tr
0.6
Turn-Off Time
td(off)
7.9
tf
4.4
Dynamic
Input Capacitance
Ciss
VGS=0V, VDS=10V, f=1MHz
920
pF
Output Capacitance
Coss
155
Reverse Transfer Capacitance
Crss
75
NN : DFN3*3-8L
Pb - free
Halogen - free



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