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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE17409B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE17409B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page  ACE17409B P-Channel Enhancement Mode Power MOSFET VER 1.2 1 Description Backlighting Power Management Functions DC-DC Converters Features VDS=-30V ID=-36A RDS(ON)@VGS=-10V,TYP 11 mΩ RDS(ON)@VGS=-4.5V,TYP17 mΩ Absolute Maximum Ratings Parameter Symbol Ratings Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current(Continuous) *AC TC=25℃ ID -36 A TC=70℃ -29 Drain Current(Pulsed) *B IDM -144 A Power Dissipation TC=25℃ PD 30 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Thermal Resistance Ratings Parameter Symbol Typical Maximum Units Maximum Junction-to-Ambient t ≤ 10 s RthJA 30 40 °C/W Maximum Junction-to-Lead Steady State RthJC 3.5 4.2 |
Ähnliche Teilenummer - ACE17409B |
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Ähnliche Beschreibung - ACE17409B |
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