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AV2001 Datenblatt(PDF) 1 Page - Avic Technology |
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AV2001 Datenblatt(HTML) 1 Page - Avic Technology |
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1 / 3 page ![]() @vic AV2001 TO-92 Plastic-Encapsulate Transistors AV2001 TRANSISTOR(NPN ) FEATURES Power dissipation PCM : 0.6 W (Tamb=25℃) Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA , IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=30 V , IE=0 0.1 µA Collector cut-off current ICEO VCE=20 V , IB=0 0.1 µA Emitter cut-off current IEBO VEB=5 V , IC=0 0.1 µA DC current gain hFE VCE=1V, IC=100m A 90 400 Collector-emitter saturation voltage VCE(sat) IC=700mA, IB= 70m A 0.6 V Base-emitter saturation voltage VBE(sat) IC= 700mA, IB=70mA 1.2 V Transition frequency f T VCE=6V, IC= 10mA f = 30MHz 50 MHz CLASSIFICATION OF hFE Rank M L K Range 90-180 135-270 200-400 1 2 3 TO—92 1. EMITTER 2. COLLECTOR 3. BASE Copyright @vic Electronics Corp. 1 Website http://www.avictek.com |
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