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FDN338 Datenblatt(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Teilenummer FDN338
Bauteilbeschribung  P-Channel 20-V(D-S) MOSFET
PDF  5 Pages
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Hersteller  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

FDN338 Datenblatt(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  FDN338 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co FDN338 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co FDN338 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co FDN338 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co FDN338 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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Electrical Characteristics(T
A = 25
OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = -250 µA
-20
V
∆BV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient
I
D = -250 µA, Referenced to 25
oC
-28
mV/
oC
I
DSS
Zero Gate Voltage Drain Current
V
DS = -16 V, VGS = 0 V
-1
µA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 8 V,VDS = 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -8 V, VDS = 0 V
-100
nA
ON CHARACTERISTICS (Note)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = -250 µA
-0.4
-0.6
-1.5
V
∆V
GS(th)/∆TJ
Gate Threshold Voltage Temp. Coefficient
I
D = -250 µA, Referenced to 25
oC
2
mV/
oC
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = -4.5 V, ID = -1.6 A
0.110
Ω
V
GS = -2.5 V, ID = -1.3 A
0.150
I
D(ON)
On-State Drain Current
V
GS = -4.5 V, VDS = -5 V
-2.5
A
g
FS
Forward Transconductance
V
DS = -5 V, ID = -1.6 A
4.4
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = -10 V, VGS = 0 V,
f = 1.0 MHz
405
pF
C
oss
Output Capacitance
170
pF
C
rss
Reverse Transfer Capacitance
45
pF
SWITCHING CHARACTERISTICS (Note)
t
D(on)
Turn - On Delay Time
V
DD = -5 V, ID = -1 A,
V
GS = -4.5 V, RGEN = 6 Ω
6.5
13
ns
t
r
Turn - On Rise Time
20
35
ns
t
D(off)
Turn - Off Delay Time
31
50
ns
t
f
Turn - Off Fall Time
21
35
ns
Q
g
Total Gate Charge
V
DS = -5 V, ID = -1.6 A,
V
GS = -4.5 V
6
8.5
nC
Q
gs
Gate-Source Charge
0.8
nC
Q
gd
Gate-Drain Charge
1.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-0.42
A
V
SD
Drain-Source Diode Forward Voltage
V
GS = 0 V, IS = -0.42 A (Note)
-0.7
-1.2
V
Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment :
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
a. 250
oC/W when mounted on
a
0.02 in
2 pad of 2oz Cu.
b. 270
oC/W when mounted on
a 0.001 in
2 pad of 2oz Cu.
FDN338
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
www.sztuofeng.com
2
,2018 V1.0
Apr



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