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TF7409B Datenblatt(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Teilenummer TF7409B
Bauteilbeschribung  P-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Hersteller  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

TF7409B Datenblatt(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

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Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
VGS=-10V, ID
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-10A
Ω
Forward Transconductance
gFS
VDS=-15V,ID=-10A
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
1600
-
PF
Output Capacitance
Coss
-
350
-
PF
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
-
300
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
10
-
nS
Turn-on Rise Time
tr
-
15
-
nS
Turn-Off Delay Time
td(off)
-
110
-
nS
Turn-Off Fall Time
tf
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=6Ω
70
-
nS
Total Gate Charge
Qg
-
30
-
nC
Gate-Source Charge
Qgs
-
5.5
-
nC
Gate-Drain Charge
Qgd
VDS=-15V,ID=-10A
VGS=-10V
-
8
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=-10A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
=-10A
-
14
17
V
1.7
3.0
1.0
m
-
25
30
S
-
-
10
V
1.2
-
Page
V 1. 0
www.sztuofeng.com
-
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
PDFN 3x3 Plastic-Encapsulate MOSFETS
TＦ７４０９Ｂ



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