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IXTP02N120P Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer IXTP02N120P
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTP02N120P Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IXTP02N120P
FEATURES
·
Drain Current : ID= 0.2A@ TC=25℃
·
Drain Source Voltage
: VDSS= 1200V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 75Ω(Max) @ VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for Switched Mode Power Supplies (SMPS),
motor control,welding, and in general purpose switching
resistance applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1200
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
0.2
A
IDM
Drain Current-Single Pulsed
0.6
A
PD
Total Dissipation @TC=25℃
33
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.5
℃
/W


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