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SIR892DP Datenblatt(PDF) 5 Page - Vishay Siliconix

Teilenummer SIR892DP
Bauteilbeschribung  N-Channel 25-V (D-S) MOSFET
PDF  13 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIR892DP Datenblatt(HTML) 5 Page - Vishay Siliconix

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Document Number: 68639
S-83048-Rev. B, 22-Dec-08
www.vishay.com
5
Vishay Siliconix
SiR892DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
22
44
66
88
110
0
255075
100
125
150
TC - Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
12
24
36
48
60
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
TA -Ambient Temperature (°C)



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