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NX5P2190 Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer NX5P2190
Bauteilbeschribung  Logic controlled high-side power switch
PDF  20 Pages
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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NX5P2190 Datenblatt(HTML) 6 Page - NXP Semiconductors

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NX5P2190
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1.1 — 15 January 2015
6 of 20
NXP Semiconductors
NX5P2190
Logic controlled high-side power switch
8.7 Reverse bias current/back drive protection (RCP)
The reverse bias current protection circuit can only be triggered when EN is set HIGH. If
VBUS > (VINT + 30 mV) for longer than 4 ms; or VBUS > (VINT + 0.45 V) the device is in
reverse bias. The RCP circuit disables the N-channel MOSFET and sets the FAULT
output LOW. Once VBUS < VINT for longer than 4 ms the device returns to the defined
state. If the RCP circuit is active, setting the EN pin LOW returns the device to low-power
mode.
8.8 FAULT output
The FAULT output is an open-drain output that requires an external pull-up resistor. If any
of the UVLO, OVLO, RCP, OCP or OTP circuits is activated, the FAULT output is set LOW
to indicate that a fault has occurred. The FAULT output returns to the high impedance
state automatically once the fault condition is removed.
8.9 VDET output
VDET is an analog output that allows a controller to monitor the voltage level on VBUS.
8.10 In-rush current protection
When the N-channel MOSFET is enabled, the in-rush current protection circuit clamps the
switch current until VBUS = VINT
 200 mV. The resistor connected to ILIM sets the clamp
current. The in-rush current protection circuit is disabled in low-power mode.



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