IRFD310

www.vishay.com

Vishay Siliconix

S21-0887-Rev. D, 30-Aug-2021

1

Document Number: 91133

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• For automatic insertion

• End stackable

•Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertiable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serveres as a

thermal link to the mounting surface for power dissipation

levels up to 1 W.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

PRODUCT SUMMARY

400

3.6

17

3.4

8.5

Configuration

Single

N-Channel MOSFET

G

D

S

HVMDIP

D

S

G

ORDERING INFORMATION

Package

HVMDIP

Lead (Pb)-free

IRFD310PbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

400

V

Gate-source voltage

± 20

Continuous drain current

0.35

A

0.22

2.8

Linear derating factor

0.0083

W/°C

46

mJ

0.35

A

0.10

mJ

Maximum power dissipation

1.0

W

dV/dt

4.0

V/ns

Operating junction and storage temperature range

-55 to +150

°C

Soldering recommendations (peak temperature)

For 10 s