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2SCR583D3 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SCR583D3
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SCR583D3 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SCR583D3
DESCRIPTION
·
Collector-emitter breakdown voltage
: BVCEO= 50V(Min)
·
High DC Current Gain
: hFE= 180-450@ (VCE= 3V, IC= 1A)
·
Low Saturation Voltage
: VCE(sat)= 0.35V(Max)@ (IC= 3A, IB= 0.15A)
·
Complement to Type 2SAR583D3
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
PT
Total Power Dissipation @TC=25℃
10
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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