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ST9060C Datenblatt(PDF) 1 Page - STMicroelectronics |
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ST9060C Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() M243 Epoxy sealed 1 3 2 1. Drain 2. Gate 3. Source GADG310120180952IG Features • Excellent thermal stability • Common source configuration • Integrated ESD protection – HBM Class 2 • POUT (@28 V) = 80 W with 17 dB gain / 70% efficiency @945 MHz • BeO free package • In compliance with European Directive 2002/95/EC Description The ST9060C is a 28/32 V common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. The device can be used in Class A, AB and C for all typical modulation formats. Product status link ST9060C Product summary Order code ST9060C Package M243 Branding ST9060C RF Power LDMOS transistor HF up to 1.5 GHz ST9060C Datasheet DS12437 - Rev 2 - March 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
Ähnliche Teilenummer - ST9060C |
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Ähnliche Beschreibung - ST9060C |
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