Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

AF4502CSLA Datenblatt(PDF) 2 Page - Anachip Corp

Teilenummer AF4502CSLA
Bauteilbeschribung  P & N-Channel 30-V (D-S) MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  ANACHIP [Anachip Corp]
Direct Link  
Logo ANACHIP - Anachip Corp

AF4502CSLA Datenblatt(HTML) 2 Page - Anachip Corp

  AF4502CSLA Datasheet HTML 1Page - Anachip Corp AF4502CSLA Datasheet HTML 2Page - Anachip Corp AF4502CSLA Datasheet HTML 3Page - Anachip Corp AF4502CSLA Datasheet HTML 4Page - Anachip Corp AF4502CSLA Datasheet HTML 5Page - Anachip Corp AF4502CSLA Datasheet HTML 6Page - Anachip Corp AF4502CSLA Datasheet HTML 7Page - Anachip Corp AF4502CSLA Datasheet HTML 8Page - Anachip Corp  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
AF4502C
P & N-Channel 30-V (D-S) MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Jul 20, 2004
2/8
Absolute Maximum Ratings (T
A=25ºC unless otherwise noted)
Symbol
Parameter
N-Channel P-Channel
Units
VDS
Drain-Source Voltage
30
-30
VGS
Gate-Source Voltage
20
-25
V
TA=25ºC
10
-8.5
ID
Continuous Drain Current (Note 1)
TA=70ºC
8.1
-6.8
A
IDM
Pulsed Drain Current (Note 2)
±50
±50
A
IS
Continuous Source Current (Diode Conduction) (Note 1)
2.3
-2.1
A
TA=25ºC
2.1
2.1
PD
Power Dissipation (Note 1)
TA=70ºC
1.3
1.3
W
TJ, TSTG
Operating Junction and Storage Temperature Range
-
-55 to 150
ºC
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
RθJC
Maximum Junction-to-Case (Note 1)
t < 5 sec
40
ºC/W
RθJA
Maximum Junction-to-Ambient (Note 1)
t < 5 sec
60
ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (T
A=25ºC unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Ch
Min.
Typ.
Max.
Unit
Static
VGS=0V, ID=250uA
N
30
-
-
V(BR)DSS Drain-Source breakdown Voltage
VGS=0V, ID=-250uA
P
-30
-
-
V
VDS= VGS, ID=250uA
N
1
1.95
3
VGS(th)
Gate-Threshold Voltage
VDS= VGS, ID=-250uA
P
-1.0
-1.6
-3
V
VGS=20V, VDS=0V
N
-
-
±100
IGSS
Gate-Body Leakage
VGS=-20V, VDS=0V
P
-
-
±100
nA
VDS=24V, VGS=0V
N
-
-
1
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
P
-
-
-1
uA
VDS=5V, VGS=10V
N
20
-
-
ID(on)
On-State Drain Current (Note 3)
VDS=-5V, VGS=-10V
P
-50
-
-
A
VGS=10V, ID=10A
-
11
13.5
VGS=4.5V, ID=8.4A
N
-
15
20
VGS=-10V, ID=-8.5A
-
16
19
rDS(on)
Drain-Source On-Resistance
(Note 3)
VGS=-4.5V, ID=-6.8A
P
-
26
30
mΩ
VDS=15V, ID=10A
N
-
40
-
gfs
Forward Tranconductance
(Note 3)
VDS=-15V, ID=-9.5A
P
-
31
-
S



Html Pages

1 2 3 4 5 6 7 8


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com