| Datenblatt-Suchmaschine für elektronische Bauteile |
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30N06. Datenblatt(PDF) 6 Page - VBsemi Electronics Co.,Ltd |
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30N06. Datenblatt(HTML) 6 Page - VBsemi Electronics Co.,Ltd |
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6 / 9 page ![]() Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit R g IAS 0.01 Ω tp D.U.T. L V DS + - V DD 5 V Vary tp to obtain required IAS IAS VDS VDD VDS tp Q GS Q GD Q G VG Charge 5 V D.U.T. 3 mA V GS V DS I G I D 0.3 µF 0.2 µF 50 k Ω 12 V Current regulator Current sampling resistors Same type as D.U.T. + - www.VBsemi.com m m m m m m m m 服务热线:400-655-8788 30N06. 6 |
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