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72N60DM6 Datenblatt(PDF) 6 Page - STMicroelectronics

Teilenummer 72N60DM6
Bauteilbeschribung  Automotive-grade N-channel 600 V, 37 m typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 long leads package
PDF  12 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

72N60DM6 Datenblatt(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical capacitance characteristics
GADG110520211406CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 8. Typical output capacitance stored energy
GADG110520211409EOS
40
30
20
10
0
0
100 200 300 400 500 600
EOSS
(µJ)
VDS (V)
Figure 9. Normalized gate threshold vs temperature
GADG110520211407VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
TJ (°C)
ID = 250 µA
Figure 10. Normalized on-resistance vs temperature
GADG110520211407RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
TJ (°C)
VDS = 10 V
IDS = 28 A
Figure 11. Normalized breakdown voltage vs temperature
GADG110520211408BDV
1.10
1.05
1.00
0.95
0.90
0.85
-75
-25
25
75
125
V(BR)DSS
(norm.)
TJ (°C)
ID = 1 mA
Figure 12. Typical reverse diode forward characteristics
GADG110520211409SDF
1.2
1.0
0.8
0.6
0.4
0
10
20
30
40
50
VSD
(V)
ISD (A)
T J = -50 °C
T J = 25°C
T J = 150°C
STWA72N60DM6AG
Electrical characteristics (curves)
DS13286 - Rev 2
page 6/12



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