STF18N65DM2 datasheet(4/12 Pages) STMICROELECTRONICS

Teilenummer	STF18N65DM2

Bauteilbeschribung	N-channel 650 V, 231 m typ., 12 A, MDmesh DM2 Power MOSFET in a TO-220FP package

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 12 A

1.6

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 100 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

Qrr

Reverse recovery charge

342

IRRM

Reverse recovery current

6.4

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 100 V, TJ = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

198

Qrr

Reverse recovery charge

1340

IRRM

Reverse recovery current

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STF18N65DM2

Electrical characteristics

DS12957 - Rev 2

page 4/12

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