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STM4532 Datenblatt(PDF) 2 Page - SamHop Microelectronics Corp.

Teilenummer STM4532
Bauteilbeschribung  Dual E nhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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Hersteller  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM4532 Datenblatt(HTML) 2 Page - SamHop Microelectronics Corp.

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S T M4532
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BVDSS
=
VGS 0V, ID 250uA
=
30
V
Zero Gate Voltage Drain Current
IDSS
VDS 24V, VGS 0V
=
=
1
uA
Gate-Body Leakage
IGSS
VGS
20V, VDS 0V
=
=
nA
ON CHAR ACTER ISTICS b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = 250uA
=
0.8
V
Drain-Source On-State R esistance
R DS(ON)
VGS 10V, ID 6A
VGS 4.5V, ID 5.2A
On-State Drain Current
ID(ON)
VDS = 5V, VGS = 10V
A
S
Forward Transconductance
FS
g
VDS 10V, ID 6.0A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =8V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 10V,
ID = 1A,
VGEN = 4.5V,
R L = 10
R GEN = 6
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =10V, ID = 6A,
VGS =4.5V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
1.8
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (TA 25 C unless otherwise noted)
m ohm
m ohm
ohm
ohm
50
40
28
40
15
6
510
155
127
15.6
9.7
26.3
26.9
9.3
2.5
3.2
100



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