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STGF20M65DF2 Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STGF20M65DF2
Bauteilbeschribung  Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT
PDF  16 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF20M65DF2 Datenblatt(HTML) 4 Page - STMicroelectronics

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Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 20 A,
VGE = 15 V, RG = 12 Ω
(see Figure 28. Test circuit for
inductive load switching)
26
-
ns
tr
Current rise time
10.8
-
ns
(di/dt)on
Turn-on current slope
1409
-
A/µs
td(off)
Turn-off delay time
108
-
ns
tf
Current fall time
65
-
ns
Eon(1)
Turn-on switching energy
0.14
-
mJ
Eoff(2)
Turn-off switching energy
0.56
-
mJ
Ets
Total switching energy
0.7
-
mJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 20 A,
VGE = 15 V, RG = 12 Ω,
TJ = 175 °C
(see Figure 28. Test circuit for
inductive load switching)
28.4
-
ns
tr
Current rise time
11.2
-
ns
(di/dt)on
Turn-on current slope
1393
-
A/µs
td(off)
Turn-off delay time
107
-
ns
tf
Current fall time
145
-
ns
Eon(1)
Turn-on switching energy
0.3
-
mJ
Eoff(2)
Turn-off switching energy
0.85
-
mJ
Ets
Total switching energy
1.15
-
mJ
tsc
Short-circuit withstand time
VCC = 400 V, VGE = 13 V,
TJstart = 150 °C
10
-
µs
VCC = 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 20 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 28. Test circuit for
inductive load switching)
-
166
ns
Qrr
Reverse recovery charge
-
690
nC
Irrm
Reverse recovery current
-
13.2
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
769
A/µs
Err
Reverse recovery energy
-
81
µJ
trr
Reverse recovery time
IF = 20 A, VR = 400 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs
(see Figure 28. Test circuit for
inductive load switching)
-
281
ns
Qrr
Reverse recovery charge
-
2010
nC
Irrm
Reverse recovery current
-
19.6
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
370
A/µs
Err
Reverse recovery energy
-
215
µJ
STGF20M65DF2
Electrical characteristics
DS11363 - Rev 4
page 4/16



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