STGP20M65DF2 datasheet(5/16 Pages) STMICROELECTRONICS

Teilenummer	STGP20M65DF2

Bauteilbeschribung	Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

PDF	16 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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2.1

Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

IGBT06111520M65BPDT

160

120

-50

100

150

P TOT

(W)

T C (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 2. Collector current vs case temperature

IGBT06111520M65BCCT

-50

100

150

I C

(A)

T C (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

IGBT29101520M65FOC25

I C

(A)

V CE (V)

V GE = 15 V

9 V

11 V

13 V

7 V

Figure 4. Output characteristics (TJ = 175 °C)

IGBT29101520M65FOC175

I C

(A)

V CE (V)

7 V

9 V

13 V

11 V

15 V

V GE =

Figure 5. VCE(sat) vs junction temperature

IGBT29101520M65FVCET

3.0

2.6

2.2

1.8

1.4

-50

100

150

V CE(SAT)

(V)

T J (°C)

V GE = 15 V

I C =10 A

I C =20 A

I C =40 A

Figure 6. VCE(sat) vs collector current

3.0

2.6

2.2

1.8

1.4

1.0

0.6

I C (A)

IGBT29101520M65FVCEC

V CE(SAT)

(V)

V GE = 15 V

T j = 175 °C

T j = - 40 °C

T j = 25 °C

STGP20M65DF2

Electrical characteristics (curves)

DS11374 - Rev 3

page 5/16

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