1

Characteristics

Table 1. Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state RMS current (180 ° conduction angle)

Tc = 82.5 °C

40

A

IT(AV)

Average on-state current (180 ° conduction angle)

25

ITSM

Non repetitive surge peak on-state current ( Tj initial = 25 °C)

tp = 8.3 ms

420

A

tp = 10 ms

400

I2t

I2t value for fusing

tp = 10 ms

800

A2s

dl/dt

Critical rate of rise of on-state current

IG = 100 mA, dIg/dt = 1 A/µs

f = 60 Hz

Tj = 125 °C

100

A/µs

IGM

Maximum peak positive gate current

tp = 20 µs

Tj = 125 °C

8

A

VGM

Maximum peak positive gate voltage

5

V

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

VRGM

Maximum peak reverse gate voltage

3.5

V

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)

Symbol

Test conditions

Value

Unit

IGT

VD = 12 V, RL = 33 Ω

Min.

10

mA

Max.

50

VGT

Max.

1.5

V

VGD

VD = VDRM, RL = 3.3 kΩ

Tj = 125 °C

Min.

0.2

V

IH

IT = 500 mA, gate open

Max.

100

mA

IL

IG = 1.2 x IGT

Max.

130

mA

dV/dt

VD = 67% VDRM, gate open

Tj = 125 °C

Min.

2

kV/µs

tgt

IT = 40 A, VD = VDRM, IG = 200 mA, (dIG/dt) max = 0.2 A/µs

Typ.

2

µs

tq

ITM = 40 A, VD = 800 V, dlTM/dt = 30 A/µs, VR = 75 V, dVD/dt = 20 V/µs

Tj = 125 °C

Typ.

100

µs

Table 3. Static characteristics

Symbol

Test conditions

Value

Unit

VTM

ITM = 80 A, tp = 380 µs

Tj = 25 °C

Max.

1.75

V

VTO

Threshold voltage

Tj = 125 °C

Max.

0.9

RD

Dynamic resistance

Tj = 125 °C

Max.

9.8

mΩ

IDRM, IRRM

VDRM = VRRM = 1200 V

Tj = 25 °C

Max.

10

µA

Tj = 125 °C

5

mA

TN4050-12PI

Characteristics

DS12925 - Rev 1

page 2/11