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DF2S16CT Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer DF2S16CT
Bauteilbeschribung  ESD Protection Diodes Silicon Epitaxial Planar
PDF  6 Pages
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF2S16CT Datenblatt(HTML) 2 Page - Toshiba Semiconductor

  DF2S16CT Datasheet HTML 1Page - Toshiba Semiconductor DF2S16CT Datasheet HTML 2Page - Toshiba Semiconductor DF2S16CT Datasheet HTML 3Page - Toshiba Semiconductor DF2S16CT Datasheet HTML 4Page - Toshiba Semiconductor DF2S16CT Datasheet HTML 5Page - Toshiba Semiconductor DF2S16CT Datasheet HTML 6Page - Toshiba Semiconductor  
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DF2S16CT
2
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25
))))
VRWM: Working peak reverse
voltage
VBR: Reverse breakdown voltage
IBR: Reverse breakdown current
IR: Reverse current
VC: Clamp voltage
IPP: Peak pulse current
RDYN: Dynamic resistance
Fig.
Fig.
Fig.
Fig. 4.1
4.1
4.1
4.1 Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
VZ
ZZ
IR
Ct
Note
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 12 V
VR = 0 V, f = 1 MHz
Min
15.3
Typ.
10
Max
17.1
35
0.5
Unit
V
Ω
µA
pF
5.
5.
5.
5. Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Test Condition
IEC61000-4-2 (Contact discharge)
ESD Protection
±12 kV
Note:
Criterion: No damage to devices.
2014-04-14
Rev.4.0



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