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400EADAB1 Datenblatt(PDF) 8 Page - ON Semiconductor |
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400EADAB1 Datenblatt(HTML) 8 Page - ON Semiconductor |
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8 / 47 page ![]() NCP12400 www.onsemi.com 8 Table 5. ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, VHV = 125 V, VCC = 11 V unless otherwise noted) Characteristics Unit Max Typ Min Symbol Test Condition REMOTE CONTROL ON FB PIN The voltage above which the part enters the on mode VCC > VCC(off), VHV = 60 V VON − 2.2 − V The voltage below which the part enters the off mode VCC > VCC(off) VOFF 0.5 0.6 0.7 V Minimum hysteresis between the VON and VOFF VCC > VCC(off), VHV = 60 V VHYST 500 − − mV Pull−up current in off mode VCC > VCC(off) IOFF − 5 − mA Go To Off mode timer VCC > VCC(off) tGTOM 400 500 600 ms OVERLOAD PROTECTION Fault timer duration tfault 108 128 178 ms Fault timer reset time VCS < 0.7 V, D < 90% DMAX tfault,res 150 200 250 ms Autorecovery mode latch−off time duration tautorec 0.85 1.00 1.35 s OVERPOWER PROTECTION VHV to IOPC conversion ratio KOPC − 0.54 − mA / V Current flowing out of CS pin (Note 7) VHV = 125 V VHV = 162 V VHV = 325 V VHV = 365 V IOPC(125) IOPC(162) IOPC(325) IOPC(365) − − − 105 0 20 110 130 − − − 150 mA FB voltage above which IOPC is applied VHV = 365 V VFB(OPCF) − 2.6 − V FB voltage below which is no IOPC applied VHV = 365 V VFB(OPCE) − 1.6 − V FAULT INPUT High threshold VLatch going up VOVP 2.43 2.50 2.57 V Low threshold VLatch going down, TJ = 25°C VOTP 0.380 0.400 0.420 V OTP resistance threshold (TJ = 25°C) External NTC resistance is going down ROTP 7.6 8.0 8.5 kW OTP resistance threshold (TJ = 80°C) External NTC resistance is going down ROTP − 8.5 − kW OTP resistance threshold (TJ = 110°C) External NTC resistance is going down ROTP − 9.5 − kW Current source for direct NTC connection During normal operation During soft−start VLatch = 0.2 V INTC INTC(SSTART) 30 60 50 100 70 140 mA Current source for direct NTC connection During normal operation VLatch = 0.2 V, TJ = 25°C INTC 47 50 53 mA Blanking duration on high latch detection tLatch(OVP) 35 50 70 ms Blanking duration on low latch detection tLatch(OTP) − 350 − ms Clamping voltage ILatch = 0 mA ILatch = 1 mA Vclamp0(Latch) Vclamp1(Latch) 1.0 1.8 1.2 2.4 1.4 3.0 V TEMPERATURE SHUTDOWN Temperature shutdown TJ going up TTSD − 150 − °C Temperature shutdown hysteresis TJ going down TTSD(HYS) − 30 − °C 6. Guaranteed by design. 7. CS pin source current is a sum of Ibias and IOPC, thus at VHV = 125 V is observed the Ibias only, because IOPC is switched off. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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