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TTC013 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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TTC013 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
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2 / 7 page ![]() TTC013 2 5. 5. 5. 5. Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics 5.1. 5.1. 5.1. 5.1. Static Characteristics (Unless otherwise specified, T Static Characteristics (Unless otherwise specified, T Static Characteristics (Unless otherwise specified, T Static Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V(BR)CEO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) Test Condition VCB = 600 V, IE = 0 A VEB = 7 V, IC = 0 A IC = 10 mA, IB = 0 A VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 0.16 A IC = 0.16 A, IB = 20 mA IC = 0.16 A, IB = 20 mA Min 350 80 100 30 Typ. Max 1 1 200 0.3 1.1 Unit µA V V 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (Unless otherwise specified, T Dynamic Characteristics (Unless otherwise specified, T Dynamic Characteristics (Unless otherwise specified, T Dynamic Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Switching time (rise time) Switching time (storage time) Switching time (fall time) Symbol tr tstg tf Test Condition See Figure 5.2.1 VCC ≈ 200 V, RL = 1.25 kΩ, IB1 = 20 mA, IB2 = 40 mA, Duty cycle ≤ 1% Min Typ. 0.12 3.2 0.17 Max Unit µs Fig. Fig. Fig. Fig. 5.2.1 5.2.1 5.2.1 5.2.1 Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit Switching Time Test Circuit 2015-08-04 Rev.3.0 ©2015 Toshiba Corporation |
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