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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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CMBT2222 Datenblatt(PDF) 1 Page - Continental Device India Limited |
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CMBT2222 Datenblatt(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking CMBT2222 = lB CMBT2222A = lP ABSOLUTE MAXIMUM RATINGS CMBT2222 CMBT2222A Collector–base voltage (open ernitter) VCB0 max. 60 75 V Collector–emitter voltage (open base) VCE0 max. 30 40 V Emitter base voltage (open collector) VEB0 max. 5,0 6,0 V Collector current (d.c.) IC max. 600 mA Total power dissipation up to Tamb = 25 °C Ptot max. 250 mW D.C. current gain IC = 150mA; VCE = 10V hFE 100 to 300 lC = 500mA; VCE = 10V hFE >30 40 Transition frequency at f = 100 MHz IC = 20 mA; VCE = 20 V fT > 250 300 MHz CMBT2222 CMBT2222A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Ähnliche Teilenummer - CMBT2222 |
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Ähnliche Beschreibung - CMBT2222 |
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