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CMBT4401 Datenblatt(PDF) 1 Page - Continental Device India Limited

Teilenummer CMBT4401
Bauteilbeschribung  SILICON PLANAR EPITAXIAL TRANSISTOR
PDF  3 Pages
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Hersteller  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CMBT4401 Datenblatt(HTML) 1 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON PLANAR EPITAXIAL TRANSISTOR
N–P–N transistor
Marking
CMBT4401 = 2X
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage
VCEO
max.
40 V
Collector current (DC)
IC
max.
600 mA
DC current gain
min.
100
IC = 150 mA; VCE = 1 V
hFE
max.
300
Total power dissipation up to Tamb = 25 °C
Ptot
max
250 mW
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage
VCEO
max.
40 V
Collector–base voltage
VCBO
max.
60 V
Emitter–base voltage
VEBO
max.
6 V
Collector current (DC)
IC
max.
600 mA
Total power dissipation up to Tamb = 25°C
Ptot
max
250 mW
Storage temperature range
Tstg
–55 to +150 ° C
Junction temperature
Tj
max.
150 ° C
CMBT4401
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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