CMBT8099 datasheet(1/4 Pages) CDIL

Teilenummer	CMBT8099

Bauteilbeschribung	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

PDF	4 Pages

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Hersteller	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CMBT8098

CMBT8099

SOT-23

Formed SMD Package

Marking

CMBT8098- KA

CMBT8099- KB

ABSOLUTE MAXIMUM RATING

DESCRIPTION

SYMBOL

CMBT8098

UNITS

Collector Base Voltage

VCBO

60

80

V

Collector Emitter Voltage

VCEO

60

80

V

Emitter Base Voltage

VEBO

6.0

V

Collector Current Continuous

IC

500

mA

Power Dissipation Ta=25ºC (Note1)

PD

225

mW

Derate Above 25ºC

1.8

mW/ºC

Power Dissipation Ta=25ºC (Note2)

PD

300

mW

Derate Above 25ºC

2.4

mW/ºC

Operating And Storage Junction

Temperature Range

Thermal Resistance

Junction to Ambient (Note1)

Rth(j-a)

556

ºC/W

Junction to Ambient (Note2)

Rth(j-a)

417

ºC/W

Note (1) FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)

Note (2) Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.

ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Base Voltage

VCBO

IC=100µA, IE=0

CMBT8098

60

V

CMBT8099

80

V

Collector Emitter Voltage

VCEO

IC=10mA, IB=0

CMBT8098

60

V

CMBT8099

80

V

Emitter Base Voltage

VEBO

IE=10µA, IC=0

6.0

V

Collector Cut Off Current

ICES

VCE=60V, IB=0

0.1

µA

Collector Cut Off Current

ICBO

CMBT8098

VCB=60V, IE=0

0.1

µA

CMBT8099

VCB=80V, IE=0

0.1

µA

Emitter Cut Off Current

IEBO

VEB=6V, IC=0

0.1

µA

CMBT8099

Tj,Tstg

- 55 to +150

ºC

PIN CONFIGURATION (NPN)

1 = BASE

2 = EMITTER

3 = COLLECTOR

2

1

3

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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