CMBTA06 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

VCBO

max.

80 V

Collector–emitter voltage (open base)

VCEO

max.

80 V

Emitter–base voltage (open collector)

VEBO

max.

Collector current (d.c.)

max.

500

Total power dissipation up to Tamb = 25 °C Ptot

max.

250

Storage temperature

Tstg

max.

–55 to +150

° C

Junction temperature

max.

150

° C

THERMAL CHARACTERISTICS

Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

500

K/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

CMBT A05

A06

Collector–emitter breakdown voltage

IC = 1 mA; IB = 0

V(BR)CEO min.

80 V

Emitter–base breakdown voltage

IC = 0; IE = 100 µAV(BR)EBO min.

Collector cut–off current

VCE = 60 V; IB = 0

ICEO

max.

0.1

µA

VCB = 60 V; IE = 0

ICBO

max. 0.1

µA

VCB = 80 V; IE = 0

ICBO

max.

0.1

µA

Saturation voltages

IC = 100 mA; IB = 10 mA

VCEsat

max.

0.25

Base–emitter on voltage

IC = 100 mA; VCE = 1 V

VBE(on)

max.

1.2

D.C. current gain

IC = 10 mA; VCE = 1 V

hFE

min.

100

IC = 100 mA; VCE = 1 V

hFE

min.

100

Transition frequency at f = 100 MHz

IC = 10 mA; VCE = 2 V

min.

100

MHz

CMBTA05

CMBTA06

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