CMBTA56 datasheet(1/3 Pages) CDIL

Teilenummer	CMBTA56

Bauteilbeschribung	SILICON EPITAXIAL TRANSISTORS

PDF	3 Pages

Scroll/Zoom	100%

Hersteller	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 1 of 3

SILICON EPITAXIAL TRANSISTORS

P–N–P transistor

Marking

CMBTA55 = 2H

CMBTA56 = 2G

ABSOLUTE MAXIMUM RATINGS

CMBT A55

A56

Collector–base voltage (open emitter)

–VCBO

max.

60

80 V

Collector–emitter voltage (open base)

–VCEO

max.

60

80 V

Emitter–base voltage (open collector)

–VEBO

max.

4

V

Collector current (d.c.)

–I C

max.

500

mA

Total power dissipation up to Tamb = 25 °C

Ptot

250

mW

D.C. current gain

–IC = 100 mA; –VCE = 1 V

hFE

min.

100

Transition frequency at f = 100 MHz

–IC = 100 mA; –VCE = 1 V

fT

min.

50

MHz

Collector–emitter saturation voltage

–IC = 100 mA; IB = 10 mA

VCEsat

max.

0.25

V

CMBTA55

CMBTA56

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

3

2

1

SOT-23 Formed SMD Package

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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