| Datenblatt-Suchmaschine für elektronische Bauteile |
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PFS7629H Datenblatt(PDF) 29 Page - Power Integrations, Inc. |
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PFS7629H Datenblatt(HTML) 29 Page - Power Integrations, Inc. |
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29 / 38 page ![]() Rev. F 08/20 29 PFS7x23-7x29/7633-7636 www.power.com NOTES: A. Not tested parameter. Guaranteed by design. B. Tested in typical Boost PFC application circuit. C. Normally limited by internal circuitry. D. Based on device characterization. Parameter Symbol Conditions Min Typ Max Units Qspeed Diode (3A) PFS7723-7729 DC Characteristics Reverse Current I R V R = 600 V T J(D) = 25 °C - 500 mA T J(D) = 100 °C 0.25 - mA Forward Voltage V F I F = 3 A T J(D) = 25 °C 2.5 3.1 V T J(D) = 100 °C 2.1 - Junction Capacitance C J V R = 10 V, 1 MHz See Note A 12 - pF Dynamic Characteristics (Note: See Figures 19, 20 for dynamic characteristic definition) Reverse Recovery Time t RR di/dt = 200 A/ms, V R = 400 V I F = 3 A T J(D) = 25 °C 20 - ns T J(D) = 100 °C See Note D 27 - Reverse Recovery Charge Q RR di/dt = 200 A/ms, V R = 400 V I F = 3 A T J(D) = 25 °C 21 30 nC T J(D) = 100 °C See Note D 43 - Maximum Reverse Recovery Current I RRM di/dt = 200 A/ms, V R = 400 V I F = 3 A T J(D) = 25 °C 1.65 23 A T J(D) = 100 °C See Note D 2.3 - Softness Factor = t B/tA S di/dt = 200 A/ms, V R = 400 V I F = 3 A See Note A T J(D) = 25 °C 0.9 - T J(D) = 100 °C 0.9 - |
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