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CSC2688R Datenblatt(PDF) 1 Page - Continental Device India Limited

Teilenummer CSC2688R
Bauteilbeschribung  NPN SILICON EPITAXIAL POWER TRANSISTOR
PDF  2 Pages
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Hersteller  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CSC2688R Datenblatt(HTML) 1 Page - Continental Device India Limited

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NPN SILICON EPITAXIAL POWER TRANSISTOR
CSC2688
TO-126
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
VCBO
300
V
Collector -Emitter Voltage
VCEO
300
V
Emitter Base Voltage
VEBO
5
V
Collector Current Continuous
IC
200
mA
Collector Power Dissipation @ Ta=25 deg C
PC
1.25
W
Collector Power Dissipation @ Tc=25 deg C
PC
10
W
Junction Temperature
Tj
150
deg C
Storage Temperature Range
Tstg
-55 to +150
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Collector Emitter Voltage
VCEO
IC=5mA, IB=0
300
-
V
Collector Base Voltage
VCBO
IC=0.1mA, IE=0
300
-
V
Emitter Base Voltage
VEBO
IE=0.1mA,IC=0
5
-
V
Collector Cut off Current
ICBO
VCB=200V, IE=0
-
0.1
uA
Emitter Cut off Current
IEBO
VEB=4V,IC=0
-
0.1
uA
Collector Emitter Saturation Voltage
VCE(Sat)*
IC=50mA,IB=5mA
-
1.5
V
DC Current Gain
hFE*
IC=10mA, VCE=10V
40
250
Dynamic Characteristics
Transition Frequency
ft
VCE=30V,IC=10mA,
50
-
MHz
Feed Back Capacitance
Cre
VCB=30V, IE=0
-
3
pF
f=1MHz
*hFE Classification
R: 40-80
O : 60-120
Y :100-200
G :160-250
*PULSE TEST:PW=350uS, Duty Cycle=2%
Continental Device India Limited
Data Sheet
Page 1 of 2
B
C
E
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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