HX6408

Advanced Information

8

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ASYNCHRONOUS WRITE CYCLE AC TIMING CHARACTERISTICS (1)

Worst Case (3)

-55 to 125°C

Symbol

Parameter

Typical

(2)

Min

Max

Units

TAVAVW

Write Cycle Time (4)

300KRad

1MRad

20

25

ns

TWLWH

Write Enable Write Pulse Width

300KRad

1MRad

15

20

ns

TSLWH

Chip Select to End of Write Time

300KRad

1MRad

16

20

ns

TDVWH

Data Valid to End of Write Time

300KRad

1MRad

12

15

ns

TAVWH

Address Valid to End of Write Time

300KRad

1MRad

20

25

ns

TWHDX

Data Hold after End of Write Time

0

ns

TAVWL

Address Valid Setup to Start of Write Time

0

ns

TWHAX

Address Valid Hold after End of Write Time

0

ns

TWLQZ

Write Enable to Output Disable Time

7

ns

TWHQX

Write Disable to Output Enable Time

4

ns

TWHWL

Write Disable to Write Enable Pulse Width (5)

5

ns

(1) Test conditions: input switching levels, VIL/VIH=0V/3V, input rise and fall times <1 ns/V, input and output timing reference levels shown in

the Tester AC Timing Characteristics table, capacitive output loading ≥50 pF, or equivalent capacitive load 5 pF for TWLQZ.

(2)

Typical operating conditions: VDD=3.3V, TA=25°C, pre-radiation.

(3) Worst case operating conditions: VDD=3.0V to 3.6V, -55°C to 125°C, post total dose 25°C

(4) TAVAVW = TWLWH + TWHWL

(5) Guaranteed but not tested

ADDRESS

NCS

DATA OUT

NSL

HIGH

IMPEDANCE

NWE

DATA IN

DATA VALID