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MMFTP84 Datenblatt(PDF) 2 Page - Diotec Semiconductor |
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MMFTP84 Datenblatt(HTML) 2 Page - Diotec Semiconductor |
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2 / 3 page ![]() MMFTP84 Characteristics Kennwerte Tj = 25°C Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung - ID = 10 µA - V(BR)DSS 60 V – – Drain-Source leakage current – Drain-Source-Leckstrom - VDS = 40 V - VDS = 50 V - VDS = 50 V, Tj = 125°C - IDSS – – 100 nA 10 µA 60 µA Gate-Source leakage current – Gate-Source-Leckstrom VGS = ± 20 V IGSS – – ± 10 nA Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VGS, - ID = 1 mA - VGS(th) 0.8 V – 2 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand - VGS = 10 V, - ID = 130 mA RDS(on) – – 10 Ω Forward Transfer Admittance – Übertragungssteilheit - VDS = 25 V, - ID = 130 mA ׀ gfs ׀ 50 mS – – Input Capacitance – Eingangskapazität - VDS = 25 V, f = 1 MHz Ciss – – 45 pF Output Capacitance – Ausgangskapazität - VDS = 25 V, f = 1 MHz Coss – – 25 pF Reverse Transfer Capacitance – Rückwirkungskapazität - VDS = 25 V, f = 1 MHz Crss – – 12 pF Turn-On Time – Anstiegszeit VGS = 0 ... -10 V, - VDD = 40 V, - ID = 200 mA t(on) – 3 ns – Turn-Off Time – Abfallzeit VGS = -10 ... 0 V, - VDD = 40 V, - ID = 200 mA t(off) – 7 ns – Typical thermal resistance junction to ambient air Typischer Wärmewiderstand Sperrschicht – umgebende Luft RthA 500 K/W 1) Disclaimer: See data book page or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Mounted on P.C. board with 3 mm2 copper pad per terminal – Montage auf Leiterplatte mit 3 mm2 Lötpad je Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG [A] I D Typical transfer characteristics Typische Übertragungskennlinien 1.0 V GS 2.0 2.5 3.0 3.5 [V] 5.0 4.0 T = 150°C j V = 10V DS T = 25°C j -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 T = -55°C j Typical output characteristics ) 2 Typische Ausgangskennlinien 2) -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 I D [A] [V] V DS -8 -6 -4 0 V = -6V GS V = -4V GS V = -3V GS V = -2.5V GS V = -5V GS MMFTP84 V = -7.5V GS V = -10V GS |
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