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M3014 Datenblatt(PDF) 4 Page - MOSDESIGN SEMICONDUCTOR CORP |
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M3014 Datenblatt(HTML) 4 Page - MOSDESIGN SEMICONDUCTOR CORP |
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4 / 9 page ![]() 4/9 2004-09-06 IR TV/VCD TRANSMITTER IR CONTROL IC 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. IR CONTROL M3014 Table 1:Pulse Train Timing Mode T O ( ms ) tp ( μs ) t M ( μ s ) t ML ( μ s ) t MH ( μ s) t W ( ms ) Flashed 2.53 8.8 ─ ─ ─ 121 Modulated 2.53 ─ 26.4 17.6 8.8 121 Fosc 455KHz t OSC = 2.2 μs tp 4 x t OSC Flashed pulse width t M 12 x t OSC Modulation period t ML 8 x t OSC Modulation period low t MH 4 x t OSC Modulation period high t W 55296 x t OSC Word distance T O 1152 x t OSC Basic unit of pulse distance The following number of pulses may be selected by Metal option:N = 8 , 12 , 16. Note:The different dividing ratio for To and t W between flash mode and carrier mode is obtained by changing the module of a particular divider by 3 during flash mode to divide by 4 during carrier mode. This allows the use of a 600KHz ceramic resonator during carrier mode to obtain a better noise immunity for the receiver without a significant change in To and t W. For first samples, the correct divider ration is obtained by a metal mask option. For final parts, this is automatically done together with the selection of flash- / carrier mode. Table 2:Pulse Train Separation ( tb ) Code tb Logic “ 0 “ 2 x To Logic “ 1 “ 3 x To Toggle bit time 2 x To or 3 x To Reference time 3 x To Table 3:Transmission mode and sub-system address selection. The sub-system address and the transmission mode are defined by connecting the ADRM input to one or more driver outputs ( R0 to R6 ) of the key matrix. If more than one driver is connected to ADRM, they must be decoupled by diodes. Sub-system address Driver R0 ~ R6 Mode # S2 S1 S0 0 1 2 3 4 5 6 0 1 1 1 O 1 0 0 0 O O 2 0 0 1 O O 3 0 1 0 O O 4 0 1 1 O O 5 1 0 0 O O Flashed 6 1 0 1 O O 0 1 1 1 1 0 0 0 O 2 0 0 1 O 3 0 1 0 O 4 0 1 1 O 5 1 0 0 O Modulated 6 1 0 1 O O = Connected to ADRM Blank = not Connected to ADRM |
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