TLLG440., TLLR440., TLLY440.

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Vishay Semiconductors

Rev. 2.6, 15-Sep-2021

2

Document Number: 83029

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) In one packing unit IVmin./IVmax.

≤ 0.5

Note

(1) In one packing unit IVmin./IVmax.

≤ 0.5

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

TLLG440., TLLR440., TLLY440.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

6V

DC forward current

IF

7mA

Surge forward current

tp

≤ 10 μs

IFSM

0.15

A

Power dissipation

Tamb

≤ 84 °C

PV

20

mW

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

-40 to +100

°C

Storage temperature range

Tstg

-55 to +100

°C

Soldering temperature

t

≤ 5 s, 2 mm from body

Tsd

260

°C

Thermal resistance junction to ambient

RthJA

800

K/W

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

TLLR440., RED

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 2 mA

TLLR4400

IV

0.63

1.2

-

mcd

TLLR4401

IV

12

-

mcd

Dominant wavelength

IF = 2 mA

λd

612

-

625

nm

Peak wavelength

IF = 2 mA

λp

-

635

-

nm

Angle of half intensity

IF = 2 mA

ϕ

-± 25

-

°

Forward voltage

IF = 2 mA

VF

-1.9

2.4

V

Reverse voltage

IR = 10 μA

VR

620

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-50-

pF

OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

TLLY440., YELLOW

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Luminous intensity (1)

IF = 2 mA

TLLY4400

IV

0.63

1.2

-

mcd

TLLY4401

IV

12

-

mcd

Dominant wavelength

IF = 2 mA

λd

581

-

594

nm

Peak wavelength

IF = 2 mA

λp

-

585

-

nm

Angle of half intensity

IF = 2 mA

ϕ

-± 25

-

°

Forward voltage

IF = 2 mA

VF

-2.4

2.9

V

Reverse voltage

IR = 10 μA

VR

620

-

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

-50-

pF