P4C1256 datasheet(4/8 Pages) ETC1

Teilenummer	P4C1256

Bauteilbeschribung	HIGH SPEED 32K x 8 STATIC CMOS RAM

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P4C1256

Notes:

WE is HIGH for READ cycle.

1 is LOW, CE2 is HIGH and OE is LOW for READ cycle.

3. ADDRESS must be valid prior to, or coincident with

1 transition

LOW .

4. Transition is measured

± 200 mV from steady state voltage prior to

change, with loading as specified in Figure 1. This parameter is

sampled and not 100% tested.

5. READ Cycle Time is measured from the last valid address to the first

transitioning address.

READ CYCLE NO. 1 (

OE CONTROLLED)(1)

READ CYCLE NO. 2 (ADDRESS CONTROLLED)

READ CYCLE NO. 3 (

CE CONTROLLED)

ADDRESS

DATA OUT

tOH

DATA VALID

PREVIOUS DATA VALID

(5)

OLZ

ADDRESS

tRC

DATA OUT

(5)

tOH

tAC

tOHZ

tHZ

(4)

tOE

tAA

tAC

DATA OUT

tRC

tLZ

(8)

DATA VALID

ICC

ISB

tPU

HIGH IMPEDANCE

tPD

tHZ

VCC SUPPLY

CURRENT

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